Goals and objectives of the Section:

• S. Nishchuk, Researcher
• D. Teteruk, Junior Researcher

Equipment:

Deposition of polycrystalline and epitaxial single-crystal diamond films. Thicknesses of polycrystalline films of 15 to 500 microns. The thicknesses of epitaxial monocrystalline films is from a few micrometers to several millimeters. The level of impurities in high-purity single-crystal films is less than 1 ppb. Epitaxial single crystal films doped with boron and nitrogen. Rapid growth of epitaxial single crystal thick films in the working atmosphere supplemented with nitrogen - growth rate up to 60 µm/h.

Initial vacuum: 10^-7 mbar;

Microwave generator: 6 kW, 2.45 GHz;

Substrate temperature: 500-1300 °C;

Substrate dimensions: diameter up to 50 mm;

Operating pressure: up to 250 mbar;

The number of high-purity gas lines: 7.